powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 1 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information 20v p-channel enhanc ement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t a = +25c -20v 8m ? @ v gs = -4.5v -12a 9.8m ? @ v gs = -2.5v -10a 13m ? @ v gs = -1.8v -9.3a 17m ? @ v gs = -1.5v -8.3a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? load switch ? power management functions features ? low r ds(on) ? ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so-8 enabling smaller end product ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: powerdi3333-8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging dmp2008ufg-7 powerdi3333-8 2000/tape & reel DMP2008UFG-13 powerdi3333-8 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information bottom view internal schematic s s s g d d d d pin 1 top view s36 = product type marking code yyww = date code marking yy = last digit of year (ex: 11 = 2011) ww = week code (01 ~ 53) source gate drain s36 yyww powerdi3333-8
powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 2 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage (note 5) v gss 8 v continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c t c = +25c i d -12 -9.5 -54 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -80 a maximum continuous body diode forward current (note 6) i s -2.2 a avalanche current (note 8) i as -15 a avalanche energy (note 8) e as -113 mj thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 2.2 w t c = +25c 41 thermal resistance, junction to ambient (note 5) r ja 59 c/w (note 6) 137 thermal resistance, junction to case (note 6) r jc 3.0 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -1 a v ds = -16v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = ? 8v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) -0.4 ? -1.0 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? ? 8 m ? v gs = -4.5v, i d = -12a ? ? 9.8 v gs = -2.5v, i d = -10a ? ? 13 v gs = -1.8v, i d = -9.3a ? ? 17 v gs = -1.5v, i d = -8.3a forward transfer admittance |y fs | ? 42 ? s v ds = -5v, i d = -12a dynamic characteristics (note 10) input capacitance c iss ? 6909 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 635 ? reverse transfer capacitance c rss ? 563 ? gate resistance r g ? 2.5 ? ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g ? 72 ? nc ? v dd = -10v, i d = -12a total gate charge (v gs = -2.5v) q g ? 40 ? gate-source charge q g s ? 8.6 ? gate-drain charge q g d ? 14.5 ? turn-on delay time t d ( on ) ? 22 ? ns v gs = -4.5v, v dd = -10v, r g = 6 ? , i d = -12a turn-on rise time t r ? 33 ? turn-off delay time t d ( off ) ? 291 ? turn-off fall time t f ? 124 ? body diode characteristics diode forward voltage v sd ? -0.7 ? v v gs = 0v, i s = -12a ? -0.7 ? v v gs = 0v, i s = -2a reverse recovery time (note 10) t r r ? 25 ? ns i f = -12a, di/dt = 100a/s reverse recovery charge (note 10) q r r ? 15 ? nc i f = -12a, di/dt = 100a/s notes: 5. aec-q101 v gs maximum is ? 6.4v. 6. r ja is determined with the device mounted on fr-4 substrate pc board, 2oz copper , with 1inch square copper plate. r jc is guaranteed by design while r ja is determined by the user?s board design. 7. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 8 .uis in production with l = 1mh, t j = +25c 9. short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to product testing.
powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 3 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information 10 20 30 40 50 0 0 0.5 1.0 1.5 2.0 -v , drain -source voltage (v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d v = 4.5v gs v = 2.5v gs v = 2.0v gs v = 1.8v gs v = 1.5v gs v = 1.2v gs 0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics t = 150c a ? t = 125c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = -5.0v ds 0.01 0.02 0.03 0.04 0.05 01020304050 0 -i , drain source current (a) fig. 3 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0.005 0.015 0.025 0.010 0.020 0.030 0 12345678 v , gate-source voltage (v) gs fig. 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i = -12a t = 125c d a i = -12a t = 25c d a 0.004 0.008 0.012 0.016 0 0.020 0 5 10 15 20 25 30 -i , drain source current (a) fig. 5 typical on-resistance vs. drain current and temperature d r , drain-s o urce o n-resistance( ) ds(on) ? t = -55c a ? t = 25c a ? t = 85c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.0 1.0 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on)
powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 4 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information 0.005 0.015 0.010 0.020 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 7 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v= -4.5v i= a gs d -12 v=5v i= a gs d -2. -10 0.2 0.4 0.6 0.8 1.2 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 8 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e(v) gs(th) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 9 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s 100,000 0 5 10 15 20 10,000 1,000 100 -v , drain-source voltage (v) fig. 10 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t c oss c rss f = 1mhz c iss 0.5 1.5 2.5 3.5 4.5 0 1020304050607080 0 1.0 2.0 3.0 4.0 -v , g a t e-s o u r c e v o l t a g e (v) gs q , total gate charge (nc) fig. 11 gate-charge characteristics g 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i , d r ai n c u r r e n t (a) d -v , drain-source voltage (v) fig. 12 soa, safe operation area ds r limited ds(on) t = 150c t = 25c j(max) a v = -8v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 5 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t) = r(t) * r r = 125c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse powerdi3333-8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ?? ?? 0.203 b 0.27 0.37 0.32 b2 ?? ?? 0.20 l 0.35 0.45 0.40 l1 ?? ?? 0.39 e ?? ?? 0.65 z ?? ?? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 14 85 x y y1 y3 y2 x2 c 14 85 g g1
powerdi is a registered trademark of diodes incorporated dmp2008ufg document number: ds35694 rev. 13 - 2 6 of 6 www.diodes.com june 2013 ? diodes incorporated dmp2008ufg advance information advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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